BOUND EXCITONS IN SI-DOPED GAAS/AL0.22GA0.78 AS SINGLE QUANTUM WELLS

被引：34

作者：

NOMURA, Y ^{[1
]}

SHINOZAKI, K ^{[1
]}

ISHII, M ^{[1
]}

机构：

[1] OPTOELECTR JOINT RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 05期

关键词：

D O I：

10.1063/1.336015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1864 / 1866

页数：3

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