INTERFACE PROPERTIES OF METAL-OXIDE SEMICONDUCTOR AND METAL-INSULATOR SEMICONDUCTOR STRUCTURES ON GA1-XINXAS WITH X = 0.35 AND 0.10

被引：2

作者：

GOURRIER, S

FRIEDEL, P

CHANE, JP

机构：

来源：

THIN SOLID FILMS | 1983年 / 103卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(83)90432-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：155 / 166

页数：12

共 21 条

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