PLASMA ANODIZATION OF GA1-XINXAS (X=0.35 AND 0.10) AND STUDY OF MOS INTERFACE PROPERTIES

被引：6

作者：

GOURRIER, S

CHANE, JP

机构：

来源：

关键词：

D O I：

10.1049/el:19820107

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：156 / 157

页数：2

共 6 条

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[3]

SZE SM, 1969, PHYSICS SEMICONDUCTO, pCH9

[4] NATIVE GROWN PLASMA OXIDES AND INVERSION-LAYERS ON INGAAS [J].

TELL, B ;

NAHORY, RE ;

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DEWINTER, JC .

WIEDER, HH ;

CLAWSON, AR ;

ELDER, DI ;

COLLINS, DA .

ELECTRON DEVICE LETTERS, 1981, 2 (03) :73-74

[6] FERMI LEVEL AND SURFACE-BARRIER OF GAXIN1-XAS ALLOYS [J].

WIEDER, HH .