QUANTUM BOX FABRICATION TOLERANCE AND SIZE LIMITS IN SEMICONDUCTORS AND THEIR EFFECT ON OPTICAL GAIN

被引：135

作者：

VAHALA, KJ

机构：

[1] California Inst of Technology,, Pasadena, CA, USA, California Inst of Technology, Pasadena, CA, USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 03期

关键词：

D O I：

10.1109/3.157

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

LASERS, SEMICONDUCTOR

引用

收藏

页码：523 / 530

页数：8

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[11] EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 217 - 219
[12] APPLICATION OF AN ELECTRONIC WAVE-PACKET FORMALISM TO LOCAL-OPERATOR EQUATIONS OF MOTION FOR SEMICONDUCTOR-LASERS
VAHALA, K
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[J]. PHYSICAL REVIEW A, 1985, 32 (01): : 345 - 356
[13] REDUCTION OF THE FIELD SPECTRUM LINEWIDTH OF A MULTIPLE QUANTUM-WELL LASER IN A HIGH MAGNETIC-FIELD - SPECTRAL PROPERTIES OF QUANTUM DOT LASERS
VAHALA, K
ARAKAWA, Y
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (07) : 365 - 367
[14] YARIV A, P CLEO 87