2-GHZ 150-MU-W SELF-ALIGNED SI MESFET LOGIC

被引：9

作者：

NULMAN, J ^{[1
]}

KRUSIUS, JP ^{[1
]}

机构：

[1] CORNELL UNIV, SCH ELECT ENGN, ITHACA, NY 14853 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 05期

关键词：

D O I：

10.1109/EDL.1984.25869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：159 / 161

页数：3

共 23 条

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[9] TWO-DIMENSIONAL AND 3-DIMENSIONAL ANALYTICAL SOLUTIONS FOR POST-ANNEAL IMPLANT PROFILES THROUGH ARBITRARY MASK EDGES [J].

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[10]

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