SILICON MESFET DIGITAL CIRCUIT TECHNIQUES

被引：14

作者：

HARTGRING, CD

ROSARIO, BA

PICKETT, JM

机构：

[1] TEKTRONIX INC,BEAVERTON,OR 97077

[2] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,LOS ANGELES,CA 90024

[3] UNIV CALIF LOS ANGELES,ELECTR RES LAB,LOS ANGELES,CA 90024

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1981年 / 16卷 / 05期

关键词：

D O I：

10.1109/JSSC.1981.1051640

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：578 / 584

页数：7

共 10 条

[1] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC [J].

EDEN, RC ;

WELCH, BM ;

ZUCCA, R ;

LONG, SI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) :299-317

[2]

EDEN RC, 1980, IEEE INT SOLID STATE, P122

[3]

HARTGRING C, 1981, THESIS U CALIFORNIA

[4] MESFET MODEL FOR CIRCUIT ANALYSIS [J].

HARTGRING, CD ;

OLDHAM, WG ;

CHIU, TY .

SOLID-STATE ELECTRONICS, 1980, 23 (02) :121-126

[5]

HARTGRING CD, UNPUBLISHED

[6]

HOUSTON TW, 1981, JAN HIGH SPEED DIG T

[7] QUASI-NORMALLY-OFF MESFET LOGIC FOR HIGH-PERFORMANCE GAAS ICS [J].

NUZILLAT, G ;

BERT, G ;

NGU, TP ;

GLOANEC, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1102-1109

[8]

PICKETT JM, 1981, CICC DIG TECH PAPERS

[9]

PICKETT JM, 1979, JUN SIL MESFET WORKS

[10]

ROSARIO BA, 1979, JUN SIL MESFET WORKS

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