EVIDENCE FOR 2 ENERGY-LEVELS ASSOCIATED WITH EL2 TRAP IN GAAS

被引：26

作者：

WOSINSKI, T

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1985年 / 36卷 / 04期

关键词：

D O I：

10.1007/BF00616555

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：213 / 216

页数：4

共 20 条

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[13]

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[17] IDENTIFICATION OF ASGA ANTISITES IN PLASTICALLY DEFORMED GAAS [J].

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[18]

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[19] ARSENIC ANTISITE DEFECTS AS THE MAIN ELECTRON TRAPS IN PLASTICALLY DEFORMED GAAS [J].

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