DEVELOPMENT OF MORPHOLOGICAL INSTABILITY AND FORMATION OF CELLS IN SILICON ALLOYS DURING PULSED LASER IRRADIATION

被引：32

作者：

NARAYAN, J

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 59卷 / 03期

关键词：

D O I：

10.1016/0022-0248(82)90382-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：583 / 598

页数：16

共 18 条

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[2]

BROWN WL, 1980, LASER ELECTRON BEAM

[3] GROWTH INTERFACE BREAKDOWN DURING LASER RECRYSTALLIZATION FROM THE MELT [J].

CULLIS, AG ;

HURLE, DTJ ;

WEBBER, HC ;

CHEW, NG ;

POATE, JM ;

BAERI, P ;

FOTI, G .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :642-644

[4]

Kodera H., 1963, JAP J APPL PHYS, V2, P212, DOI [10.1143/JJAP.2.212, DOI 10.1143/JJAP.2.212]

[5]

Morris L. R., 1969, Journal of Crystal Growth, V5, P361, DOI 10.1016/0022-0248(69)90038-4

[6] STABILITY OF PLANAR INTERFACE DURING SOLIDIFICATION OF DILUTE BINARY ALLOY [J].

MULLINS, WW ;

SEKERKA, RF .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :444-&

[7] INTERFACE INSTABILITY AND CELL-FORMATION IN ION-IMPLANTED AND LASER-ANNEALED SILICON [J].

NARAYAN, J .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1289-1293

[8] CELL-FORMATION AND INTERFACIAL INSTABILITY IN LASER-ANNEALED SI-IN AND SI-SB ALLOYS [J].

NARAYAN, J ;

NARAMOTO, H ;

WHITE, CW .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :912-915

[9]

NARAYAN J, UNPUB

[10] A PRISMATIC SUBSTRUCTURE FORMED DURING SOLIDIFICATION OF METALS [J].

RUTTER, JW ;

CHALMERS, B .

CANADIAN JOURNAL OF PHYSICS, 1953, 31 (01) :15-&

← 1 2 →