CELL-FORMATION AND INTERFACIAL INSTABILITY IN LASER-ANNEALED SI-IN AND SI-SB ALLOYS

被引：17

作者：

NARAYAN, J

NARAMOTO, H

WHITE, CW

机构：

[1] Solid STate Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, United States

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 02期

关键词：

D O I：

10.1063/1.330559

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：912 / 915

页数：4

共 10 条

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[9] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON [J].

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[10] SUPERSATURATED SUBSTITUTIONAL ALLOYS FORMED BY ION-IMPLANTATION AND PULSED LASER ANNEALING OF GROUP-III AND GROUP-V DOPANTS IN SILICON [J].

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