DIRECT MEASUREMENT OF THE POTENTIAL SPIKE ENERGY IN ALGAAS GAAS SINGLE-HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：29

作者：

LIN, HH

LEE, SC

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 08期

关键词：

D O I：

10.1109/EDL.1985.26180

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：431 / 433

页数：3

共 8 条

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ASBECK, PM ;

MILLER, DL ;

ANDERSON, RJ ;

EISEN, FH .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :310-312

[2]

Dubon C., 1983, International Electron Devices Meeting 1983. Technical Digest, P689

[3]

Hayes J. R., 1983, International Electron Devices Meeting 1983. Technical Digest, P686

[4] ORIGIN OF HIGH OFFSET VOLTAGE IN AN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

LEE, SC ;

KAU, JN ;

LIN, HH .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1114-1116

[5] CURRENT-VOLTAGE CHARACTERISTICS OF ALXGA1-XAS SCHOTTKY BARRIERS AND P-N-JUNCTIONS [J].

LEE, SC ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5202-5206

[6]

LEE SC, 1985, J APPL PHYS 0715

[7] DOUBLE HETEROJUNCTION ALXGA1-XAS/GAAS BIPOLAR-TRANSISTORS (DHBJTS) BY MBE WITH A CURRENT GAIN OF 1650 [J].

SU, SL ;

TEJAYADI, O ;

DRUMMOND, TJ ;

FISCHER, R ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (05) :130-132

[8]

Sze S. M., 1981, PHYS SEMICONDUCTOR D, V2nd, P255

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