INTERFACE DEFECTS OF ULTRATHIN RAPID-THERMAL OXIDE ON SILICON

被引：28

作者：

STATHIS, JH ^{[1
]}

BUCHANAN, DA ^{[1
]}

QUINLAN, DL ^{[1
]}

PARSONS, AH ^{[1
]}

KOTECKI, DE ^{[1
]}

机构：

[1] IBM CORP,DIV TECHNOL PROD,HOPEWELL JCT,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 21期

关键词：

D O I：

10.1063/1.109284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used capacitance-voltage and electron paramagnetic resonance to measure interface defects in ultrathin (30 angstrom) SiO2 prepared by rapid-thermal oxidation. We observe a very narrow interface state peak in the upper portion of the Si band gap, as well as both P(b0) and P(b1) defects in the as-oxidized film. Forming-gas annealing removes the interface state and most of the P(b) centers. However, from the energy level and charge state of the interface state peak, we argue that it cannot be reliably ascribed to either P(b0) or P(b1).

引用

页码：2682 / 2684

页数：3

共 10 条

[1]

FUKADA H, 1992, J APPL PHYS, V72, P1906

[2] INTERFACE TRAPS AND PB CENTERS IN OXIDIZED (100) SILICON-WAFERS [J].