X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAN AND GAP SURFACES ANNEALED IN PH3 AND NH3 AND METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAN/GAP HETEROSTRUCTURES

The annealing effects of GaN and GaP in PH3 and NH3(,) respectively, are investigated, and metalorganic chemical vapor deposition (MOCVD) growth of GaP on GaN and GaN on GaP was performed. The following results are obtained: N atoms are introduced into GaP by the annealing in NH3 at relatively low temperature of about 800 degrees C and wurtzite-GaN crystal is formed. However, the GaN crystal quality is low and GaP is degraded. On the other hand, high temperature annealing is necessary to introduce P atoms into GaN by the annealing in PH3. The heteroepitaxy of hard GaN on GaP degrades substrate quality, and the reverse epitaxy, soft GaP on hard GaN substrate, is greatly influenced by the substrate quality.