DONOR-INDUCED DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM-WELL LASERS

被引：19

作者：

MEEHAN, K

GAVRILOVIC, P

EPLER, JE

HSIEH, KC

HOLONYAK, N

BURNHAM, RD

THORNTON, RL

STREIFER, W

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 12期

关键词：

D O I：

10.1063/1.334853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5345 / 5348

页数：4

共 16 条

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[5]

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[6] GAALAS BURIED MULTIQUANTUM WELL LASERS FABRICATED BY DIFFUSION-INDUCED DISORDERING [J].

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[7] IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY [J].

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[8] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

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[10]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

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