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MEASUREMENTS OF THE 3-DIMENSIONAL IMPURITY PROFILE IN SI USING CHEMICAL ETCHING AND SCANNING TUNNELING MICROSCOPY
被引:43
作者:
TAKIGAMI, T
TANIMOTO, M
机构:
[1] NTT LSI Laboratories, Atsugi-shi
关键词:
D O I:
10.1063/1.104901
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Three-dimensional boron impurity concentration profiles in silicon substrates have been measured with 10 nm resolution by scanning tunneling microscopy (STM) on chemically etched cleaved silicon surfaces using an impurity sensitive HF-HNO3-H2O solution. Comparisons to depth profiles obtained with secondary-ion mass spectroscopy and spreading resistance methods reveal that our proposed method measures activated boron impurity concentration rather than total boron concentration. Three-dimensional impurity profiling is demonstrated with a metal-oxide-silicon structure,and the lateral junction depth in the test structure is found to be 70% of the junction depth.
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页码:2288 / 2290
页数:3
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