APPLICATION OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS TO VERY LARGE-SCALE INTEGRATED N-METAL-OXIDE-SEMICONDUCTOR AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES

被引：42

作者：

HAKEN, RA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 06期

关键词：

D O I：

10.1116/1.582957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1657 / 1663

页数：7

共 8 条

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PARMANTIE, WD
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 61 - 69
[2] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714
[3] LAU CK, 1983, ECS DIG EXT ABSTR, V83, P569
[4] FORMATION OF TITANIUM SILICIDE FILMS BY RAPID THERMAL-PROCESSING
POWELL, RA
CHOW, R
THRIDANDAM, C
FULKS, RT
BLECH, IA
PAN, JDT
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 380 - 382
[5] A TRANSMISSION-LINE MODEL FOR SILICIDED DIFFUSIONS - IMPACT ON THE PERFORMANCE OF VLSI CIRCUITS
SCOTT, DB
HUNTER, WR
SCHICHIJO, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 651 - 661
[6] SHATAS S, 1984, MAY WORKSH REFR MET, V2
[7] Shibata T., 1981, International Electron Devices Meeting, P647
[8] REFRACTORY-METAL SILICIDES FOR VLSI APPLICATIONS
SINHA, AK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 778 - 785