FORMATION OF TITANIUM SILICIDE FILMS BY RAPID THERMAL-PROCESSING

被引：34

作者：

POWELL, RA ^{[1
]}

CHOW, R ^{[1
]}

THRIDANDAM, C ^{[1
]}

FULKS, RT ^{[1
]}

BLECH, IA ^{[1
]}

PAN, JDT ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO, CA 94303 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 10期

关键词：

D O I：

10.1109/EDL.1983.25771

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：380 / 382

页数：3

共 21 条

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FULKS, RT ;

POWELL, RA ;

STACY, WT .

ELECTRON DEVICE LETTERS, 1982, 3 (07) :179-181

[2] RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J].

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HANLEY, PR ;

KAMINS, TI .

APPLIED PHYSICS LETTERS, 1981, 39 (08) :604-606

[3]

ISCOFF R, 1981, SEMICONDUCTOR IN NOV, P69

[4] CRYSTALLIZATION AND RESISTIVITY OF AMORPHOUS TITANIUM SILICIDE FILMS DEPOSITED BY CO-EVAPORATION [J].

KEMPER, MJH ;

OOSTING, PH .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6214-6219

[5]

LAU CK, 1982, DEC IEDM, P714

[6]

MOHAMMADI F, 1981, SOLID STATE TECHNOL, V65

[7] REFRACTORY SILICIDES OF TITANIUM AND TANTALUM FOR LOW-RESISTIVITY GATES AND INTERCONNECTS [J].

MURARKA, SP ;

FRASER, DB ;

SINHA, AK ;

LEVINSTEIN, HJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1409-1417

[8] SILICIDE FORMATION IN THIN CO-SPUTTERED (TITANIUM + SILICON) FILMS ON POLYCRYSTALLINE SILICON AND SIO2 [J].

MURARKA, SP ;

FRASER, DB .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :350-356

[9] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].

MURARKA, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792

[10]

MURARKA SP, 1983, SILICIDES VLSI APPLI

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