PHYSICAL DAMAGE IN SILICON FORMED BY HELICON WAVE PLASMA-ETCHING

被引：6

作者：

TSUKADA, T ^{[1
]}

NOGAMI, H ^{[1
]}

HAYASHI, J ^{[1
]}

KAWAGUCHI, K ^{[1
]}

HARA, T ^{[1
]}

机构：

[1] HOSEI UNIV,DEPT ELECT ENGN,KOGANEI,TOKYO 184,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.354245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Damage formed on silicon by helicon wave oxygen plasma is studied. The damage density decreases from 1.9 X 10(16) to 9.3 X 10(15)/cm2 with an increase of helicon wave power from 0.5 to 2.0 kW in the exposure for 5 min at a rf bias power density of 0.45 W/cm2 at 1.6 MHz. This decrease is mainly due to the rapid decrease of self-bias voltage V(dc), with these power and ion current increases. This damage density variation is much different from those in other kinds of etching, such as, in an electron cyclotron resonance plasma etching. However, the damage density increases with a bias power increase. Lower damage etching, therefore, can be achieved when high helicon wave and low bias powers are supplied.

引用

页码：5402 / 5405

页数：4

共 17 条

[1] SOME FEATURES OF RF EXCITED FULLY IONIZED LOW-PRESSURE ARGON PLASMA [J].