STUDY OF REACTIVE-ION-ETCH-INDUCED LATTICE DAMAGE IN SILICON BY AR,CF4,NF3, AND CHF3 PLASMAS

被引：22

作者：

CONNICK, IWH

BHATTACHARYYA, A

RITZ, KN

SMITH, WL

机构：

[1] SIGNET CO,PHILIPS RES LABS,SUNNYVALE,CA 94088

[2] THERMA WAVE INC,FREMONT,CA 94539

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341713

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2059 / 2063

页数：5

共 17 条

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