OBSERVATION OF BORON ACCEPTOR NEUTRALIZATION IN SILICON PRODUCED BY CF4 REACTIVE ION ETCHING OR AR ION-BEAM ETCHING

被引：30

作者：

MU, XC

FONASH, SJ

SINGH, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 02期

关键词：

D O I：

10.1063/1.97354

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：67 / 69

页数：3

共 14 条

[1]

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[2] BULK ACCEPTOR COMPENSATION PRODUCED IN PARA-TYPE SILICON AT NEAR-AMBIENT TEMPERATURES BY A H2O PLASMA [J].

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PEARTON, SJ ;

HALLER, EE .

APPLIED PHYSICS LETTERS, 1984, 44 (06) :606-608

[3] ELECTRIC-FIELD DEPENDENCE OF HYDROGEN NEUTRALIZATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :874-876

[4]

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[5] A STUDY OF CCIF3/H2 REACTIVE ION ETCHING DAMAGE AND CONTAMINATION EFFECTS IN SILICON [J].

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PARKS, C ;

KELLER, J .

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[6] PHOTOLUMINESCENCE OF HYDROGENATED AMORPHOUS SILICON [J].

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APPLIED PHYSICS LETTERS, 1977, 31 (07) :450-451

[7] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

CARLSON, DE ;

BERKEYHEISER, JE ;

WANCE, RO .

PHYSICAL REVIEW LETTERS, 1983, 51 (24) :2224-2225

[8] HYDROGEN LOCALIZATION NEAR BORON IN SILICON [J].

PANKOVE, JI ;

ZANZUCCHI, PJ ;

MAGEE, CW ;

LUCOVSKY, G .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :421-423

[9] NEUTRALIZATION OF ACCEPTORS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

WANCE, RO ;

BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1100-1102

[10]

RINGEL SA, J VAC SCI TECHNOL

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