ELECTRICAL PROPERTIES OF EPITAXIALLY GROWN INAS0.61P0.39 FILMS

被引：2

作者：

LI, SS

ANDERSON, JR

KENNEDY, JK

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

[2] USAF,CAMBRIDGE RES LAB,LG HANSCOM FIELD,BEDFORD,MA 01730

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.321729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1223 / 1228

页数：6

共 17 条

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[2]

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[7] ELECTRICAL PROPERTIES OF GERMANIUM SEMICONDUCTORS AT LOW TEMPERATURES [J].

FRITZSCHE, H .

PHYSICAL REVIEW, 1955, 99 (02) :406-419

[8] THE THEORY OF ELECTRONIC CONDUCTION IN POLAR SEMI-CONDUCTORS [J].

HOWARTH, DJ ;

SONDHEIMER, EH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1953, 219 (1136) :53-74

[9] LONG-WAVELENGTH THRESHOLD OF CS2O-COATED PHOTOEMITTERS [J].

JAMES, LW ;

UEBBING, JJ .

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[10]

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