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ROLE OF LEVEL-BROADENING IN RESONANT TUNNELLING OF ELECTRONS THROUGH DOUBLE-BARRIER HETERO-STRUCTURES

被引：1
作者：
GUPTA, R
RIDLEY, BK
机构：
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1989年 / 5卷 / 03期
关键词：
D O I：
10.1016/0749-6036(89)90325-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：417 / 419
页数：3
相关论文
共 6 条
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[5]   RESONANT TUNNELING IN DOUBLE BARRIER STRUCTURES WITH GAAS AND (INGA)AS QUANTUM-WELLS [J].
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