ELECTRONIC EXCITATIONS, LUMINESCENCE AND LATTICE DEFECT FORMATION IN ALPHA-AL2O3 CRYSTALS

被引:74
作者
VALBIS, J [1 ]
ITOH, N [1 ]
机构
[1] LATVIAN UNIV,INST SOLID STATE PHYS,RIGA 226063,LATVIA,USSR
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1991年 / 116卷 / 1-2期
关键词
AL2O3; LUMINESCENCE; ELECTRONIC EXCITATIONS; LATTICE DEFECT FORMATION; SELF-TRAPPING;
D O I
10.1080/10420159108221357
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
We review studies of the effects of electronic excitation in α-Al203, crystals, paying special attention to the problem of the existence of self-trapped excitons and self-trapped holes in this material. After a brief review on the crystallographic and electronic structures, information on thermal and radiation-induced defects is summarized. The concept of self-trapping of holes is critically reviewed and the possible contribution of the native acceptor impurities in the processes which have been attributed to the self-trapped holes is discussed. Experimental observations on the so-called intrinsic luminescence in α-Al203 crystals is surveyed and again the possible contribution of native impurities is discussed. The relaxation processes of electronic excitations in α-Al203 crystals are compared with those in MgO and Si02 having similar physical and chemical properties but differing in the crystallographic and electronic structures. The properties of metastable defects induced by electronic excitation are discussed in connection with the recently discovered transient volume expansion effect under the excitation by short electron pulses. © 1991, Taylor & Francis Group, LLC. All rights reserved.
引用
收藏
页码:171 / 189
页数:19
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