MEASUREMENT OF THE CURRENT TRANSIENT IN TA2O5 FILMS

被引：3

作者：

SUNDARAM, K

CHOI, WK

LING, CH

机构：

[1] Microelectronics Laboratory, Department of Electrical Engineering, National University of Singapore, Singapore, 0511

来源：

THIN SOLID FILMS | 1993年 / 230卷 / 02期

关键词：

D O I：

10.1016/0040-6090(93)90498-E

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Current vs. time (I-t) measurements were performed on Ta2O5-based devices. Charge build-up at the Ta2O5/SiO2 interface was used to explain the transient. The interfacial charge density was calculated from the I-t curve and the maximum was found to be 398 nC cm-2 and 317 nC cm-2 for Al/Ta2O5/Si and Al/Ta2O5/SiO2/Si capacitors respectively. The value for MTOS was comparable with the value obtained by quasi-static measurements.

引用

页码：95 / 98

页数：4

共 6 条

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