MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON

[11] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J]. PHYSICAL REVIEW, 1966, 145 (02): : 637 - &

[12] MARCH NH, 1984, INHOMOGENEOUS ELECTR

[13] MULTIVACANCIES, INTERSTITIALS, AND SELF-INTERSTITIAL MIGRATION IN SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 18 - 27

[14] Shaw D, 2012, ATOMIC DIFFUSION SEM

[15] STANDARD THERMODYNAMIC FUNCTIONS FOR FORMATION OF ELECTRONS AND HOLES IN GE, SI, GAAS, AND GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : 1133 - 1141

[16] Watkins G.D., 1975, LATTICE DEFECTS SEMI, V23, P1

[17] PROPERTIES OF INTERSTITIAL IN DIAMOND-TYPE LATTICE [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (23) : 1573 - &

[18] NEGATIVE-U PROPERTIES FOR POINT-DEFECTS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (09) : 593 - 596

[19] GREEN-FUNCTION METHODS FOR ELECTRONIC-STRUCTURE CALCULATIONS [J]. PHYSICAL REVIEW B, 1982, 26 (10): : 5433 - 5444

[11] EFFECT OF INVARIANCE REQUIREMENTS ON ELASTIC STRAIN ENERGY OF CRYSTALS WITH APPLICATION TO DIAMOND STRUCTURE [J]. PHYSICAL REVIEW, 1966, 145 (02): : 637 - &

[12] MARCH NH, 1984, INHOMOGENEOUS ELECTR

[13] MULTIVACANCIES, INTERSTITIALS, AND SELF-INTERSTITIAL MIGRATION IN SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 18 - 27

[14] Shaw D, 2012, ATOMIC DIFFUSION SEM

[15] STANDARD THERMODYNAMIC FUNCTIONS FOR FORMATION OF ELECTRONS AND HOLES IN GE, SI, GAAS, AND GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : 1133 - 1141

[16] Watkins G.D., 1975, LATTICE DEFECTS SEMI, V23, P1

[17] PROPERTIES OF INTERSTITIAL IN DIAMOND-TYPE LATTICE [J]. PHYSICAL REVIEW LETTERS, 1971, 27 (23) : 1573 - &

[18] NEGATIVE-U PROPERTIES FOR POINT-DEFECTS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1980, 44 (09) : 593 - 596

[19] GREEN-FUNCTION METHODS FOR ELECTRONIC-STRUCTURE CALCULATIONS [J]. PHYSICAL REVIEW B, 1982, 26 (10): : 5433 - 5444