OPERATION OF CCDS WITH STATIONARY AND MOVING ELECTRON-BEAM INPUT

被引:2
作者
ANTCLIFFE, GA [1 ]
ROBERTS, CG [1 ]
BARTON, JB [1 ]
PHARR, KK [1 ]
MUELLER, DW [1 ]
COLLINS, DR [1 ]
机构
[1] TEXAS INSTR INC,DALLAS,TX 75222
关键词
D O I
10.1109/T-ED.1975.18234
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:857 / 861
页数:5
相关论文
共 18 条
  • [1] ANTCLIFFE GA, 1974, DEVICE RES C SANTA B
  • [2] BARTON J, TO BE PUBLISHED
  • [3] CHARGE COUPLED SEMICONDUCTOR DEVICES
    BOYLE, WS
    SMITH, GE
    [J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (04): : 587 - +
  • [4] INFLUENCE OF BULK AND SURFACE PROPERTIES ON IMAGE SENSING SILICON DIODE ARRAYS
    BUCK, TM
    CASEY, HC
    DALTON, JV
    YAMIN, M
    [J]. BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (09): : 1827 - +
  • [5] ELECTRICAL CHARACTERISTICS OF 500-BIT AL-AL2O3-AL CCD SHIFT REGISTERS
    COLLINS, DR
    RHINES, WC
    BARTON, JB
    SHORTES, SR
    BRODERSEN, RW
    TASCH, AF
    [J]. PROCEEDINGS OF THE IEEE, 1974, 62 (02) : 282 - 284
  • [6] CHARGE-COUPLED DEVICES FABRICATED USING ALUMINUM-ANODIZED ALUMINUM-ALUMINUM DOUBLE-LEVEL METALIZATION
    COLLINS, DR
    SHORTES, SR
    MCMAHON, WR
    BRACKEN, RC
    PENN, TC
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) : 521 - 526
  • [7] RESPONSE OF SI AND GAP P-N JUNCTIONS TO A 5- TO 40-KEV ELECTRON BEAM
    CZAJA, W
    [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4236 - &
  • [8] ERB DM, 1973, P CCD APPL C SAN DIE, P157
  • [9] A CHARGE STORAGE TARGET FOR ELECTRON IMAGE SENSING
    GORDON, EI
    CROWELL, MH
    [J]. BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (09): : 1855 - +
  • [10] HOFF PH, 1969, 10 S EL ION LAS BEAM, P454