SI(110) + NI SYSTEM - STRUCTURAL, VIBRATIONAL AND ELECTRONIC-PROPERTIES

被引:20
作者
NESTERENKO, BA
机构
[1] Acad of Sciences of the Ukrainian, SSR, Russia
关键词
Crystals--Lattice Vibrations - Electrons--Diffraction - Nickel and Alloys--Thin Films - Semiconductor Materials--Structure - Surfaces--Structure;
D O I
10.1016/0169-4332(88)90283-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Vibrational properties (Debye temperature and thermal expansion coefficients) as well as electronic ones (work function, electron affinity, spectra of surface electron states in the gap) were investigated on the clean '16×2$' and Ni-induced (4×5), (5×1) and (2×1) structures of the Si(110) face. Atomic structure was monitored with LEED. Special attention was given to (4×5)Ni, (2×1)Ni and (5×1)Ni phases which showed reversible structural phase transitions. All parameters mentioned depend on the surface atomic structure. The elastic forces increase in strength and become more anharmonic upon the diminution of the elementary cell's size. Harmonic and anharmonic force constants have been obtained.
引用
收藏
页码:21 / 30
页数:10
相关论文
共 17 条
[1]   ATOMIC CONFIGURATION OF HYDROGENATED AND CLEAN SI(110) SURFACES [J].
AMPO, H ;
MIURA, S ;
KATO, K ;
OHKAWA, Y ;
TAMURA, A .
PHYSICAL REVIEW B, 1986, 34 (04) :2329-2335
[2]  
BOLSHOV LA, 1986, ZH EKSP TEOR FIZ+, V90, P569
[3]  
BRAUN OM, 1986, UKR FIZ ZH+, V31, P1839
[4]   ENERGY-LEVEL SPECTRA OF ELECTRONS AT (111), (110), AND (100) SURFACES OF SILICON AND GERMANIUM BY ION-NEUTRALIZATION SPECTROSCOPY [J].
HAGSTRUM, HD ;
BECKER, GE .
PHYSICAL REVIEW B, 1973, 8 (04) :1580-1591
[5]   FORMATION OF SURFACE SUPERSTRUCTURES BY HEAT-TREATMENTS ON NI-CONTAMINATED SURFACE OF SI(110) [J].
ICHINOKAWA, T ;
AMPO, H ;
MIURA, S ;
TAMURA, A .
PHYSICAL REVIEW B, 1985, 31 (08) :5183-5186
[6]   SHIFT OF SURFACE-PLASMON ENERGY ACROSS THE PHASE-TRANSITIONS OF SILICON RECONSTRUCTED STRUCTURES FOR SEVERAL CRYSTAL PLANES [J].
ICHINOKAWA, T ;
YAMAGAMI, N ;
AMPO, H ;
TAMURA, A .
PHYSICAL REVIEW B, 1983, 28 (10) :6151-6153
[8]   SURFACE REACTIONS OF SILICON WITH ALUMINUM AND WITH INDIUM [J].
LANDER, JJ ;
MORRISON, J .
SURFACE SCIENCE, 1964, 2 :553-565
[9]   SIMILARITY OF SI(110)5X1 AND SI(111)2X1 SURFACES [J].
MARTENSSON, P ;
HANSSON, GV ;
CHIARADIA, P .
PHYSICAL REVIEW B, 1985, 31 (04) :2581-2583
[10]   STRUCTURAL PHASE-TRANSITIONS AND SOME ELECTRONIC-PROPERTIES OF THE (110)SILICON SURFACE [J].
NESTERENKO, BA ;
BROVII, AV ;
SOROKOVYKH, AI .
SURFACE SCIENCE, 1986, 171 (03) :495-500