IMPACT IONIZATION AND DISTRIBUTION-FUNCTIONS IN SUBMICRON NMOSFET TECHNOLOGIES

被引：40

作者：

BUDE, JD ^{[1
]}

MASTRAPASQUA, M ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,5600 MB EINDHOVEN,NETHERLANDS

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 10期

关键词：

D O I：

10.1109/55.464810

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The physics of impact ionization generated substrate current in 0.1 mu m nMOSFET's technologies is clarified by comparison of experiment and full-band Monte Carlo (MC) simulation for a wide range of biases. Quasiballistic transport is confirmed. It is shown for the first time that these devices allow extraction of ionization probabilities near threshold from substrate current measurements.

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收藏

页码：439 / 441

页数：3

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