MICROWAVE HOT-ELECTRON EFFECTS IN SEMICONDUCTOR QUANTIZED INVERSION LAYERS

[21] GREENE RF, 1974, CRIT REV SOLID STATE, V4, P455

[22] HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1254 - 1257

[23] CURRENT-VOLTAGE CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS WITH SHORT CHANNELS [J]. SOLID STATE COMMUNICATIONS, 1976, 19 (05) : 471 - 473

[24] HESS K, 1974, PHYS REV B, V10, P375

[25] KAWAJI S, 1966, J PHYS SOC JPN, VS 21, P336

[26] KAWAJI S, 1967, J PHYS SOC JPN, V27, P208

[27] ENERGY RELAXATION OF ELECTRONS IN (100) N-CHANNEL OF A SI-MOSFET .1. BULK PHONON TREATMENT [J]. SURFACE SCIENCE, 1974, 46 (01) : 197 - 231

[28] Many A., 1965, SEMICONDUCTOR SURFAC

[29] PORTAL JC, 1974, 12TH P INT C PHYS SE, P259

[30] REES HD, 1973, J PHYS C SOLID STATE, V6, P262, DOI 10.1088/0022-3719/6/2/008

[21] GREENE RF, 1974, CRIT REV SOLID STATE, V4, P455

[22] HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1254 - 1257

[23] CURRENT-VOLTAGE CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS WITH SHORT CHANNELS [J]. SOLID STATE COMMUNICATIONS, 1976, 19 (05) : 471 - 473

[24] HESS K, 1974, PHYS REV B, V10, P375

[25] KAWAJI S, 1966, J PHYS SOC JPN, VS 21, P336

[26] KAWAJI S, 1967, J PHYS SOC JPN, V27, P208

[27] ENERGY RELAXATION OF ELECTRONS IN (100) N-CHANNEL OF A SI-MOSFET .1. BULK PHONON TREATMENT [J]. SURFACE SCIENCE, 1974, 46 (01) : 197 - 231

[28] Many A., 1965, SEMICONDUCTOR SURFAC

[29] PORTAL JC, 1974, 12TH P INT C PHYS SE, P259

[30] REES HD, 1973, J PHYS C SOLID STATE, V6, P262, DOI 10.1088/0022-3719/6/2/008