EFFECTS OF ION-IMPLANTATION ON CHARGES IN SILICON-SILICON DIOXIDE SYSTEM

被引：11

作者：

LEARN, AJ

HESS, DW

机构：

[1] FAIRCHILD CAMERA & INSTR CORP,RES & DEV LAB,PALO ALTO,CA 94304

[2] INTEL CORP,SANTA CLARA,CA 95051

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 01期

关键词：

D O I：

10.1063/1.323378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：308 / 312

页数：5

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