TEMPERATURE-DEPENDENCE OF EFFECTIVE MOBILITY EDGE AND INELASTIC-SCATTERING TIME IN SILICON MOS INVERSION-LAYERS IN STRONG MAGNETIC-FIELDS

被引：11

作者：

MORIYAMA, J

KAWAJI, S

机构：

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 45卷 / 06期

关键词：

D O I：

10.1016/0038-1098(83)90164-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：511 / 513

页数：3

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[7] ANALYSIS OF TEMPERATURE-DEPENDENT HALL CONDUCTIVITY IN SILICON INVERSION-LAYERS IN STRONG MAGNETIC-FIELDS BY A MOBILITY EDGE MODEL [J].

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[9] ENERGY-DEPENDENCE OF LOCALIZATION LENGTH OF TWO-DIMENSIONAL ELECTRON-SYSTEM MOVING IN A RANDOM POTENTIAL UNDER STRONG MAGNETIC-FIELDS [J].

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[10] HALL CURRENT MEASUREMENT UNDER STRONG MAGNETIC-FIELDS FOR SILICON MOS INVERSION-LAYERS [J].

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