THE VARIATION OF THE P/N JUNCTION POSITION IN GAAS/GAA1AS DOUBLE HETEROSTRUCTURES GROWN BY LOW-PRESSURE MO VPE

被引：4

作者：

HERSEE, SD

BALDY, M

DUCHEMIN, JP

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 02期

关键词：

D O I：

10.1007/BF02651136

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：345 / 357

页数：13

共 6 条

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DUCHEMIN, JP ;

BONNET, M ;

KOELSCH, F ;

HUYGHE, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1134-1149

[2] NEW CONTACT RESISTANCE PROFILING METHOD FOR ASSESSMENT OF 3-5 ALLOY MULTILAYER STRUCTURES [J].

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CARTER, AC ;

DAVIS, R ;

HILL, C .

ELECTRONICS LETTERS, 1978, 14 (11) :328-330

[3] A NEW APPROACH TO THE GETTERING OF OXYGEN DURING THE GROWTH OF GAALAS BY LOW-PRESSURE MOCVD [J].

HERSEE, SD ;

DIFORTEPOISSON, MA ;

BALDY, M ;

DUCHEMIN, JP .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :53-57

[4] STUDIES OF GAAS AND ALGAAS LAYERS GROWN BY OM-VPE [J].

SAXENA, RR ;

COOPER, CB ;

LUDOWISE, MJ ;

HIKIDO, S ;

SARDI, VM ;

BORDEN, PG .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :58-63

[5] PROPERTIES OF MO-CVD-GROWN GAAS-GAALAS LASERS AS A FUNCTION OF STRIPEWIDTH [J].

SCIFRES, DR ;

STREIFER, W ;

BURNHAM, RD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (12) :2310-2316

[6] INCREASE IN LUMINESCENCE EFFICIENCY OF ALXGA1-XAS GROWN BY ORGANOMETALLIC VPE [J].

STRINGFELLOW, GB ;

HOM, G .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :794-796

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