PHOTOLUMINESCENCE STUDY OF CD-ION IMPLANTED N-GAAS

被引：3

作者：

AOKI, K ^{[1
]}

GAMO, K ^{[1
]}

MASUDA, K ^{[1
]}

NAMBA, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,DEPT ELECT ENGN,TOYONAKA,OSAKA,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.15.145

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：145 / 149

页数：5

共 17 条

[1] Arnold G. W., 1971, Radiation Effects, V9, P257, DOI 10.1080/00337577108231057
[2] LUMINESCENCE IN INTRINSIC AND ANNEALED ELECTRON-IRRADIATED GAAS - CD
ARNOLD, GW
[J]. PHYSICAL REVIEW, 1969, 183 (03): : 777 - &
[3] BEBB HB, 1972, SEMICONDUCTORS SEMIM, V8, P197
[4] VACANCY ASSOCIATION OF DEFECTS IN ANNEALED GAAS
CHANG, LL
ESAKI, L
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (05) : 143 - &
[5] GAMO K, 1975, 4TH P INT C ION IMPL, P35
[6] GOLDSTEIN B, 1960, PHYS REV, V118, P1024
[7] GUIVARCH A, 1973, RAD DAMAGE DEFECTS S, P429
[8] ELECTRICAL PROPERTIES OF ZINC AND CADMIUM ION IMPLANTED LAYERS IN GALLIUM ARSENIDE
HUNSPERG.RG
MARSH, OJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) : 488 - &
[9] HUNSPERGER RG, 1971, ION IMPLANTATION, P247
[10] PHOTOLUMINESCENCE STUDY OF THERMAL CONVERSION IN GAAS GROWN FROM SILICA BOATS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5347 - &