CDTE (111)B GROWTH ON ORIENTED AND MISORIENTED GAAS(100) GROWN BY HOT-WALL EPITAXY

CdTe (111)B layers were grown on oriented and misoriented GaAs (100) substrates by hot-wall epitaxy. The crystallinity of the layers was examined by x-ray diffraction. The strain relaxation was investigated by x-ray diffraction and optical reflectance spectra. (1) For the layers on oriented substrates, it is found that the strain of the layer is relaxed as the layer thickness increases, but additional strain, which is probably due to the formation of twinned domains, remains and is hardly relaxed. (2) Layers on misoriented substrates are twin free with good crystalline quality. Strain is relaxed as the layer thickness increases. The residual strain of layers thicker than 10 μm is for the most part due to the difference of thermal expansion coefficients between CdTe and GaAs.