OBSERVATION OF SLOW DANGLING-BOND RELAXATION IN P-TYPE HYDROGENATED AMORPHOUS-SILICON

被引：23

作者：

CARLEN, MW

XU, YQ

CRANDALL, RS

机构：

[1] National Renewable Energy Laboratory, Golden

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.51.2173

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using junction-capacitance methods, we study the thermal charge emission of holes trapped in the dangling-bond defect D of p-type a-Si:H. Over a significant temperature range, we find a linear temperature-independent relation between emission time and the residence time of the hole on the D defect. We attribute this characteristic to a structural-relaxation process that is slow in disordered materials. © 1995 The American Physical Society.

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页码：2173 / 2179

页数：7

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