CLASSICAL VERSUS QUANTUM-MECHANICAL CALCULATION OF THE ELECTRON-DISTRIBUTION AT THE N-ALGAAS GAAS HETEROINTERFACE

被引：59

作者：

YOSHIDA, J

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 01期

关键词：

D O I：

10.1109/T-ED.1986.22453

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：154 / 156

页数：3

共 9 条

[1] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .1. SUBBAND STRUCTURE AND LIGHT-SCATTERING SPECTRA [J].

ANDO, T .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) :3893-3899

[2] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].

DINGLE, R ;

WIEGMANN, W ;

HENRY, CH .

PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830

[3] DESIGN AND FABRICATION OF HIGH TRANSCONDUCTANCE MODULATION-DOPED (AL,GA)AS/GAAS FETS [J].

LEE, K ;

SHUR, MS ;

DRUMMOND, TJ ;

SU, SL ;

LYONS, WG ;

FISCHER, R ;

MORKOC, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :186-189

[4] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J].

STERN, F .

PHYSICAL REVIEW B, 1972, 5 (12) :4891-&

[5] ELECTRON-ENERGY LEVELS IN GAAS-GA1-XALXAS HETEROJUNCTIONS [J].

STERN, F ;

DASSARMA, S .

PHYSICAL REVIEW B, 1984, 30 (02) :840-848

[6] SUBBANDS AND CHARGE CONTROL IN A TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR [J].

VINTER, B .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :307-309

[7] DONOR LEVELS IN SI-DOPED ALGAAS GROWN BY MBE [J].

WATANABE, MO ;

MORIZUKA, K ;

MASHITA, M ;

ASHIZAWA, Y ;

ZOHTA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02) :L103-L105

[8] TWO-DIMENSIONAL NUMERICAL-ANALYSIS OF THE HIGH ELECTRON-MOBILITY TRANSISTOR [J].

WIDIGER, D ;

HESS, K ;

COLEMAN, JJ .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) :266-269

[9] ANALYSIS OF HIGH ELECTRON-MOBILITY TRANSISTORS BASED ON A TWO-DIMENSIONAL NUMERICAL-MODEL [J].

YOSHIDA, J ;

KURATA, M .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :508-510

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