ROLE OF THE CHAMBER WALL IN LOW-PRESSURE HIGH-DENSITY ETCHING PLASMAS

Ultraviolet-adsorption spectroscopy has been used to examine how the chamber wall affects the concentration of gas-phase reactants in high-density etching plasmas. This technique was employed to detect CF2 in an inductively coupled discharge used for the selective etching of silicon dioxide relative to silicon nitride and polycrystalline silicon (polysilicon) films. In plasmas containing C2F6 and CF4, the concentration of CF2 depends strongly on the applied power and operating pressure as well as the amount of polymer on the walls of the chamber. Changes in the conditioning of the chamber during the etch process cause significant variations in the concentration of CF2 in the discharge. The selectivity of etching SiO2 relative to Si3N 4 films closely follows the concentration of CF2 under a variety of plasma operating conditions. The ability to measure a fundamental plasma characteristic that reflects the level of conditioning of the chamber is an important step in the real-time monitoring of a reactor parameter that currently can only be determined from postprocess measurements. © 1995 American Institute of Physics.