ANOMALOUS PUNCHTHROUGH IN ULSI BURIED-CHANNEL MOSFETS

被引：8

作者：

SKOTNICKI, T

MERCKEL, G

PEDRON, T

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期

关键词：

D O I：

10.1109/16.43679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2548 / 2556

页数：9

共 10 条

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[3]

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[4]

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[7] A NEW PUNCHTHROUGH CURRENT MODEL BASED ON THE VOLTAGE-DOPING TRANSFORMATION [J].

SKOTNICKI, T ;

MERCKEL, G ;

PEDRON, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :1076-1086

[8] ANALYTICAL STUDY OF PUNCHTHROUGH IN BURIED CHANNEL P-MOSFETS [J].

SKOTNICKI, T ;

MERCKEL, G ;

PEDRON, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (04) :690-705

[9] THE VOLTAGE-DOPING TRANSFORMATION - A NEW APPROACH TO THE MODELING OF MOSFET SHORT-CHANNEL EFFECTS [J].

SKOTNICKI, T ;

MERCKEL, G ;

PEDRON, T .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (03) :109-112

[10]

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