MODELING OF SUBSTRATE CURRENT IN PARA-MOSFETS

[1] DEPENDENCE OF CHANNEL ELECTRIC-FIELD ON DEVICE SCALING [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) : 551 - 553

[2] A SIMPLE METHOD TO CHARACTERIZE SUBSTRATE CURRENT IN MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 505 - 507

[3] ELMANSY YA, 1975, IEDM, P31

[4] ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (10) : 1189 - 1203

[5] HSU FC, 1982, IEEE T ELECTRON DEV, V29, P1735

[6] Hu C., 1983, International Electron Devices Meeting 1983. Technical Digest, P176

[7] Hu C., 1979, PROC INT ELECT DEVIC, P22, DOI [10.1109/IEDM.1979.189529, DOI 10.1109/IEDM.1979.189529]

[8] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 375 - 385

[9] LEE CA, 1964, PHYS REV, V134, P761

[10] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157

[1] DEPENDENCE OF CHANNEL ELECTRIC-FIELD ON DEVICE SCALING [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (10) : 551 - 553

[2] A SIMPLE METHOD TO CHARACTERIZE SUBSTRATE CURRENT IN MOSFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 505 - 507

[3] ELMANSY YA, 1975, IEDM, P31

[4] ELECTRON AND HOLE IONIZATION RATES IN EPITAXIAL SILICON AT HIGH ELECTRIC-FIELDS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (10) : 1189 - 1203

[5] HSU FC, 1982, IEEE T ELECTRON DEV, V29, P1735

[6] Hu C., 1983, International Electron Devices Meeting 1983. Technical Digest, P176

[7] Hu C., 1979, PROC INT ELECT DEVIC, P22, DOI [10.1109/IEDM.1979.189529, DOI 10.1109/IEDM.1979.189529]

[8] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 375 - 385

[9] LEE CA, 1964, PHYS REV, V134, P761

[10] CHARGE MULTIPLICATION IN SILICON P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 147 - 157