THEORY OF HIGH-FIELD TRANSPORT OF HOLES IN AL0.45GA0.55AS

被引:12
作者
BRENNAN, K
HESS, K
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
[3] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801
关键词
D O I
10.1063/1.336573
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:964 / 966
页数:3
相关论文
共 20 条
[1]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[2]  
[Anonymous], 1977, SEMICONDUCTORS SEMIM
[3]   DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].
BARAFF, GA .
PHYSICAL REVIEW, 1962, 128 (06) :2507-&
[4]   SINGLE-CARRIER-TYPE DOMINATED IMPACT IONIZATION IN MULTILAYER STRUCTURES [J].
BLAUVELT, H ;
MARGALIT, S ;
YARIV, A .
ELECTRONICS LETTERS, 1982, 18 (09) :375-376
[5]   THEORY OF HIGH-FIELD TRANSPORT OF HOLES IN GAAS AND INP [J].
BRENNAN, K ;
HESS, K .
PHYSICAL REVIEW B, 1984, 29 (10) :5581-5590
[6]   THEORY OF ELECTRON-IMPACT IONIZATION INCLUDING A POTENTIAL STEP - APPLICATION TO GAAS-ALGAAS [J].
BRENNAN, K ;
WANG, T ;
HESS, K .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (04) :199-201
[7]   EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS [J].
BULMAN, GE ;
ROBBINS, VM ;
BRENNAN, KF ;
HESS, K ;
STILLMAN, GE .
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) :181-185
[8]   ALLOY CLUSTERING AND ITS EFFECT ON IMPACT IONIZATION IN TERNARY III-V COMPOUNDS [J].
BURROUGHS, MS ;
HESS, K ;
HOLONYAK, N ;
LAIDIG, WD ;
STILLMAN, GE .
SOLID-STATE ELECTRONICS, 1982, 25 (02) :161-167
[9]   ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].
CAPASSO, F ;
TSANG, WT ;
HUTCHINSON, AL ;
WILLIAMS, GF .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40
[10]   STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J].
CAPASSO, F ;
TSANG, WT ;
WILLIAMS, GF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :381-390