KINETICS OF NUCLEATION AND GROWTH OF SI ON SIO2 IN VERY LOW-PRESSURE SIH4 CHEMICAL VAPOR-DEPOSITION

被引：16

作者：

DANA, SS ^{[1
]}

LIEHR, M ^{[1
]}

ANDERLE, M ^{[1
]}

RUBLOFF, GW ^{[1
]}

机构：

[1] IRST,DIV SCI MAT,I-38050 TRENT,ITALY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 25期

关键词：

D O I：

10.1063/1.108001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial growth kinetics for SiH4 chemical vapor deposition of Si on SiO2 at low temperature (500-600-degrees-C) have been revealed using rapid thermal UHV-CVD, together with in situ H-2 thermal desorption spectroscopy to titrate the amount of exposed Si surface. In the few mTorr pressure range, the reaction is heterogeneous, i.e., dominated by surface reaction. Below approximately 0.7 monolayer Si coverage, the growth kinetics is rapid (approximately t4), indicating spontaneous generation of new nuclei, while at higher coverage Si island growth dominates.

引用

页码：3035 / 3037

页数：3

共 19 条

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