CHARACTERIZATION OF IMPLANTATION AND ANNEALING OF ZN-IMPLANTED INP BY RAMAN-SPECTROMETRY

被引：37

作者：

BEDEL, E ^{[1
]}

LANDA, G ^{[1
]}

CARLES, R ^{[1
]}

RENUCCI, JB ^{[1
]}

ROQUAIS, JM ^{[1
]}

FAVENNEC, PN ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-22301 LANNION,FRANCE

来源：

关键词：

D O I：

10.1063/1.337199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1980 / 1984

页数：5

共 21 条

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[J]. APPLIED SURFACE SCIENCE, 1981, 9 (1-4) : 2 - 13
[2] ASPNES DE, 1983, PHYS REV B, V27, P2
[3] LIGHT-SCATTERING FROM LASER ANNEALED ION-IMPLANTED SEMICONDUCTORS
BALKANSKI, M
MORHANGE, JF
KANELLIS, G
[J]. JOURNAL OF RAMAN SPECTROSCOPY, 1981, 10 (JAN) : 240 - 245
[4] BARKER AS, 1975, REV MOD PHYS S2, V47
[5] RAMAN INVESTIGATION OF THE INP LATTICE-DYNAMICS
BEDEL, E
LANDA, G
CARLES, R
REDOULES, JP
RENUCCI, JB
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (10): : 1471 - 1479
[6] Carles R., 1980, Journal of the Physical Society of Japan, V49, P665
[7] SPECTROSCOPIC ELLIPSOMETRY AND RAMAN-SCATTERING STUDY OF THE ANNEALING BEHAVIOR OF BE-IMPLANTED GAAS
CHAMBON, P
ERMAN, M
THEETEN, JB
PREVOT, B
SCHWAB, C
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 390 - 392
[8] EXTREMELY RAPID OUT DIFFUSION OF SULFUR IN INP
CHIN, AK
CAMLIBEL, I
SHENG, TT
BONNER, WA
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 495 - 497
[9] HARBEKE G, 1983, RCA REV, V44, P287
[10] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700