EFFECTS OF DOPANTS AND EXCESS SILICON ON THE OXIDATION OF TASI2/POLYCRYSTALLINE SILICON STRUCTURES

被引：7

作者：

LIU, R

MURARKA, SP

PELLEG, J

机构：

[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180

[2] BEN GURION UNIV NEGEV,BEER SHEVA,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.337701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3335 / 3342

页数：8

共 27 条

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[6]

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[7] OXIDATION OF SILICIDE THIN-FILMS - TISI2 [J].

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[8]

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[9]

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[10]

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