THICKNESS DEPENDENCE OF H-2 GAS SENSOR IN AMORPHOUS SNOX FILMS PREPARED BY ION-BEAM SPUTTERING

[11] SAKAI S, 1975, EDD7550

[12] A NEW DETECTOR FOR GASEOUS COMPONENTS USING SEMICONDUCTIVE THIN FILMS [J]. ANALYTICAL CHEMISTRY, 1962, 34 (11) : 1502 - 1503

[13] Seki H., 1984, Yogyo-Kyokai-Shi, V92, P219, DOI 10.2109/jcersj1950.92.1064_219

[14] ION-BEAM SPUTTERING APPARATUS WITH A SIMPLIFIED ACCELERATOR SYSTEM FOR DEPOSITION OF THIN-FILMS [J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1987, 6 (04) : 437 - 438

[15] PROPERTIES OF VERY THIN RF SPUTTERED TRANSPARENT CONDUCTING FILMS OF SNO2 - SB AND IN2O3 - SN [J]. THIN SOLID FILMS, 1972, 13 (02) : 281 - 284

[11] SAKAI S, 1975, EDD7550

[12] A NEW DETECTOR FOR GASEOUS COMPONENTS USING SEMICONDUCTIVE THIN FILMS [J]. ANALYTICAL CHEMISTRY, 1962, 34 (11) : 1502 - 1503

[13] Seki H., 1984, Yogyo-Kyokai-Shi, V92, P219, DOI 10.2109/jcersj1950.92.1064_219

[14] ION-BEAM SPUTTERING APPARATUS WITH A SIMPLIFIED ACCELERATOR SYSTEM FOR DEPOSITION OF THIN-FILMS [J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1987, 6 (04) : 437 - 438

[15] PROPERTIES OF VERY THIN RF SPUTTERED TRANSPARENT CONDUCTING FILMS OF SNO2 - SB AND IN2O3 - SN [J]. THIN SOLID FILMS, 1972, 13 (02) : 281 - 284