COMPARISON OF BEAM-INDUCED PROFILE BROADENING EFFECTS OF GALLIUM AND COPPER IN OXYGEN-BOMBARDED SILICON

被引：30

作者：

HOMMA, Y

MARUO, T

机构：

来源：

关键词：

D O I：

10.1002/sia.740141108

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：725 / 729

页数：5

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