PHOTOEMISSION-STUDIES OF AMORPHOUS-SEMICONDUCTOR HETEROJUNCTIONS

[11] EVANGELISTI F, 1985, TETRAHEDRALLY BONDED, P457

[12] LIGHT DEGRADATION IN I-LAYERS IN THE GLASS TCO/A-SI-H/PT STRUCTURE [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 1485 - 1488

[13] FIORINI P, UNPUB

[14] KAERCHER R, 1984, PHYS REV B, V30, P1896

[15] X-RAY PHOTOELECTRON-SPECTROSCOPY AND AUGER-ELECTRON SPECTROSCOPY STUDIES OF GLOW-DISCHARGE SI1-XCX-H FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3365 - 3372

[16] MICROSCOPIC INVESTIGATIONS OF SEMICONDUCTOR INTERFACES [J]. SOLID-STATE ELECTRONICS, 1983, 26 (06) : 499 - 513

[17] ELECTRICAL-PROPERTIES OF A-SICX/A-SI HETEROJUNCTIONS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 991 - 994

[18] PATELLA F, 1984, AIP C P, V120, P402

[19] SWARTZ GA, 1984, SEMICONDUCT SEMIMET, V21, P39

[20] A-SIC-H-A-SI-H HETEROJUNCTION SOLAR-CELL HAVING MORE THAN 7.1-PERCENT CONVERSION EFFICIENCY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 237 - 239

[11] EVANGELISTI F, 1985, TETRAHEDRALLY BONDED, P457

[12] LIGHT DEGRADATION IN I-LAYERS IN THE GLASS TCO/A-SI-H/PT STRUCTURE [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 1485 - 1488

[13] FIORINI P, UNPUB

[14] KAERCHER R, 1984, PHYS REV B, V30, P1896

[15] X-RAY PHOTOELECTRON-SPECTROSCOPY AND AUGER-ELECTRON SPECTROSCOPY STUDIES OF GLOW-DISCHARGE SI1-XCX-H FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3365 - 3372

[16] MICROSCOPIC INVESTIGATIONS OF SEMICONDUCTOR INTERFACES [J]. SOLID-STATE ELECTRONICS, 1983, 26 (06) : 499 - 513

[17] ELECTRICAL-PROPERTIES OF A-SICX/A-SI HETEROJUNCTIONS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 991 - 994

[18] PATELLA F, 1984, AIP C P, V120, P402

[19] SWARTZ GA, 1984, SEMICONDUCT SEMIMET, V21, P39

[20] A-SIC-H-A-SI-H HETEROJUNCTION SOLAR-CELL HAVING MORE THAN 7.1-PERCENT CONVERSION EFFICIENCY [J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 237 - 239