MATERIALS LIMITATIONS OF AMORPHOUS-SI-H TRANSISTORS

被引：20

作者：

AST, DG

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 05期

关键词：

D O I：

10.1109/T-ED.1983.21162

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：532 / 539

页数：8

共 12 条

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[2]

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[3]

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[4]

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[5]

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LECONTELLEC M, 1982, P SID, P44

[7] POLYSILICON TRANSISTORS ON GLASS BY PULSED-LASER ANNEALING [J].

MORIN, F ;

COISSARD, P ;

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LIGEON, E ;

BONTEMPS, A .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (05) :3897-3899

[8]

OKUBO Y, 1982, P SID, P40

[9] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN ADDRESSABLE LIQUID-CRYSTAL DISPLAY PANELS [J].

SNELL, AJ ;

MACKENZIE, KD ;

SPEAR, WE ;

LECOMBER, PG ;

HUGHES, AJ .

APPLIED PHYSICS, 1981, 24 (04) :357-362

[10]

SNELL AJ, 1980, J NONCRYST SOLIDS, V35, P539

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