CHARACTERISTICS AND 3-DIMENSIONAL INTEGRATION OF MOSFETS IN SMALL-GRAIN LPCVD POLYCRYSTALLINE SILICON

[51] HYDROGEN PASSIVATION OF POLYSILICON MOSFETS FROM A PLASMA NITRIDE SOURCE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 468 - 470

[52] STUDIES OF THE HYDROGEN PASSIVATION OF SILICON GRAIN-BOUNDARIES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1050 - 1055

[53] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5247 - 5254

[54] SHAH AH, 1984, VLSI S

[55] Shichijo H., 1983, International Electron Devices Meeting 1983. Technical Digest, P202

[56] Shichijo H., 1981, International Electron Devices Meeting, P219

[57] SHICHIJO H, 1984, 1984 INT C SOL STAT, P265

[58] Singh H. J., 1983, International Electron Devices Meeting 1983. Technical Digest, P67

[59] ARC LAMP ZONE-MELTING AND RECRYSTALLIZATION OF SI FILMS ON OXIDIZED SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (09) : 824 - 826

[60] STURM JC, 1984, IEEE ELECTR DEVICE L, V5, P151, DOI 10.1109/EDL.1984.25866

[51] HYDROGEN PASSIVATION OF POLYSILICON MOSFETS FROM A PLASMA NITRIDE SOURCE [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) : 468 - 470

[52] STUDIES OF THE HYDROGEN PASSIVATION OF SILICON GRAIN-BOUNDARIES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1050 - 1055

[53] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) : 5247 - 5254

[54] SHAH AH, 1984, VLSI S

[55] Shichijo H., 1983, International Electron Devices Meeting 1983. Technical Digest, P202

[56] Shichijo H., 1981, International Electron Devices Meeting, P219

[57] SHICHIJO H, 1984, 1984 INT C SOL STAT, P265

[58] Singh H. J., 1983, International Electron Devices Meeting 1983. Technical Digest, P67

[59] ARC LAMP ZONE-MELTING AND RECRYSTALLIZATION OF SI FILMS ON OXIDIZED SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (09) : 824 - 826

[60] STURM JC, 1984, IEEE ELECTR DEVICE L, V5, P151, DOI 10.1109/EDL.1984.25866