DEGRADATION OF TUNNEL-OXIDE FLOATING-GATE EEPROM DEVICES AND THE CORRELATION WITH HIGH FIELD-CURRENT-INDUCED DEGRADATION OF THIN GATE OXIDES

被引：50

作者：

WITTERS, JS

GROESENEKEN, G

MAES, HE

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1663 / 1682

页数：20

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