THEORY OF SEMICONDUCTOR HETEROJUNCTIONS

被引：30

作者：

POLLMANN, J

MAZUR, A

机构：

来源：

THIN SOLID FILMS | 1983年 / 104卷 / 3-4期

关键词：

D O I：

10.1016/0040-6090(83)90566-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：257 / 276

页数：20

共 94 条

[1] ELECTRONIC-STRUCTURE OF THE VACUUM-SEMICONDUCTOR, METAL-SEMICONDUCTOR, AND SEMICONDUCTOR-SEMICONDUCTOR (111) INTERFACES [J].

AGRAWAL, BK .

PHYSICAL REVIEW B, 1981, 23 (06) :2995-3003

[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[3] EFFECTS OF CATION ORDER ON ENERGY-BANDS OF GAAS-ALAS HETEROSTRUCTURES [J].

ANDREONI, W ;

BALDERESCHI, A ;

CAR, R .

SOLID STATE COMMUNICATIONS, 1978, 27 (09) :821-824

[4] SIMILARITY OF (GA, AL, AS) ALLOYS AND ULTRATHIN HETEROSTRUCTURES - ELECTRONIC-PROPERTIES FROM THE EMPIRICAL PSEUDOPOTENTIAL METHOD [J].

ANDREONI, W ;

CAR, R .

PHYSICAL REVIEW B, 1980, 21 (08) :3334-3344

[5]

[Anonymous], 1978, HETEROSTRUCTURE LASE

[6] ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J].

BARAFF, GA ;

APPELBAUM, JA ;

HAMANN, DR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :999-1005

[7] SELF-CONSISTENT CALCULATION OF ELECTRONIC-STRUCTURE AT AN ABRUPT GAAS-GE INTERFACE [J].

BARAFF, GA ;

APPELBAUM, JA ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1977, 38 (05) :237-240

[8] GE-GAAS(110) INTERFACE FORMATION [J].

BAUER, RS ;

MCMENAMIN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1444-1449

[9]

BAUER RS, 1983, NOV ANN M MAT RES SO

[10] EXACT TIGHT-BINDING SOLUTION FOR INTERFACE STATES AND RESONANCES [J].

BRASHER, JD ;

DY, KS .

PHYSICAL REVIEW B, 1980, 22 (10) :4868-4875

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