DEPENDENCE OF CRITICAL THICKNESS ON GROWTH TEMPERATURE IN GEXSI1-X/SI SUPERLATTICES

被引：33

作者：

MILES, RH

MCGILL, TC

CHOW, PP

JOHNSON, DC

HAUENSTEIN, RJ

NIEH, CW

STRATHMAN, MD

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

[2] PERKIN ELMER,EDEN PRAIRIE,MN 55344

[3] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 11期

关键词：

D O I：

10.1063/1.99272

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：916 / 918

页数：3

共 21 条

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APPLIED PHYSICS LETTERS, 1987, 51 (14) :1080-1081

[8] STABILITY OF SEMICONDUCTOR STRAINED-LAYER SUPERLATTICES [J].

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[9]

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[10] MOBILITY ENHANCEMENT IN MODULATION-DOPED SI-SI1-XGEX SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J].

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